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TIP100_14 Datasheet, PDF (2/7 Pages) ON Semiconductor – Plastic Medium-Power Complementary Silicon Transistors
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TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
MAXIMUM RATINGS
Rating
TIP100, TIP101, TIP102,
Symbol
TIP105 TIP106 TIP107
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
− Peak
VCEO
VCB
VEB
IC
60
80
100
Vdc
60
80
100
Vdc
5.0
Vdc
8.0
15
Adc
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB
1.0
Adc
PD
80
W
0.64
W/°C
Unclamped Inductive Load Energy (1)
E
30
mJ
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
W
0.016
W/°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
TJ, Tstg
– 65 to + 150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.56
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
TIP100, TIP105
60
TIP101, TIP106
80
TIP102, TIP107
100
Vdc
−
−
−
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
ICEO
mAdc
−
50
−
50
−
50
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
ICBO
mAdc
−
50
−
50
−
50
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
IEBO
−
8.0
mAdc
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
hFE
−
1000 20,000
200
−
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
(IC = 8.0 Adc, IB = 80 mAdc)
VCE(sat)
−
−
Vdc
2.0
2.5
Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
VBE(on)
−
2.8
Vdc
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TIP105, TIP106, TIP107
Cob
TIP100, TIP101, TIP102
4.0
−
−
−
300
pF
−
200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
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