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| SURS8220T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Ultrafast Power Rectifiers | |||
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MURS220T3G, SURS8220T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
NonâRepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
200
V
VRWM
VR
IF(AV)
2.0 @ TL = 145ï°C
A
IFSM
A
40
Operating Junction Temperature Range
TJ
â65 to +175
ï°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Lead
(TL = 25ï°C)
Symbol
Rï±JL
Value
13
Unit
ï°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 2.0 A, TJ = 25ï°C)
(IF = 2.0 A, TJ = 150ï°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25ï°C)
(Rated dc Voltage, TJ = 150ï°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IR to 0.25 A)
Maximum Forward Recovery Time
(IF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ï£ 2.0%.
Symbol
vF
IR
trr
tfr
Value
0.95
0.77
2.0
50
35
25
25
Unit
Volts
mA
ns
ns
http://onsemi.com
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