SURB1620CTT4G Datasheet, PDF (2/5 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

MURB1620CTG, NRVUB1620CTT4G
MAXIMUM RATINGS (Per Leg)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
Average Rectified Forward Current
(Rated V_R, T_C = 150°C) Total Device
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20 kHz, T_C = 150°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FM
I_FSM
Value
200
8.0
16
16
100
Unit
V
A
A
A
Operating Junction and Storage Temperature Range
T_J, T_stg
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
Symbol
R_qJC
R_qJA
T_L
Value
3
50
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i_F = 8 A, T_C = 150°C)
(i_F = 8 A, T_C = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T_C = 150°C)
(Rated DC Voltage, T_C = 25°C)
Maximum Reverse Recovery Time
(I_F = 1 A, di/dt = 50 A/ms)
(I_F = 0.5 A, i_R = 1 A, I_REC = 0.25 A)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
Symbol
v_F
i_R
t_rr
Max
0.895
0.975
250
5
35
25
Unit
V
mA
ns
100
50
20
10
5.0
2.0
1.0
T_J = 175°C
100°C 25°C
0.7
0.3
0.1
0.2
0.4
0.6
0.8
1
v_F, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage, Per Leg
10 K
1.0 K
400
100
20
4
1
0.2
0.04
1.2 ^{0.01 0}
T_J = 175°C
100°C
25°C
20 40 60 80 100 120 140 160 180 200
V_R, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current, Per Leg*
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2