SMF05T1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Quad Array for ESD Protection

SMF05T1
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 8 X 20 ms @T_A ≤ 25°C (Note 1)
Steady State Power -- 1 Diode (Note 2)
Thermal Resistance Junction to Ambient
Above 25°C, Derate
P_pk
P_D
R_θJA
200
W
385
mW
325
°C/W
3.1
mW/°C
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
ESD Discharge
IEC61000--4--2, Air Discharge
IEC61000--4--2, Contact Discharge
T_Jmax
T_J T_stg
150
°C
--55 to +150
°C
30
kV
30
Lead Solder Temperature (10 seconds duration)
T_L
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
Device
Breakdown Voltage
V_BR @ 1 mA (Volts)
Min
Max
Leakage Current
I_R @ V_RWM = 5 V
(mA)
Capacitance
@ 0 V Bias
(pF)
Max
V_F @ I_F = 200 mA
(V)
Max Clamping
Voltage (V_C)
@ I_PP
I_PP (A) V_C (V)
SMF05
6.0
7.2
5.0
90
1.25
1.0
9.5
1. Non--repetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, P_D will be 25%. Mounted on FR--4 board with min pad.
Max Clamping
Voltage (V_C)
@ I_PP
I_PP (A) V_C (V)
12
12.5
1000
100
10
NOTE: Non--Repetitive Surge.
1
1
10
100
t, TIME (ms)
Figure 1. Pulse Width
100
t_r
90
80
70
60
50
PEAK VALUE I_RSM @ 8 ms
PULSE WIDTH (t_P) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I_RSM/2 @ 20 ms
40
30
t_P
20
10
0
1000
0
20
40
60
80
t, TIME (ms)
Figure 2. 8 × 20 ms Pulse Waveform
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