SD12CT1_07 Datasheet, PDF (2/3 Pages) ON Semiconductor – Transient Voltage Suppressor

SD12CT1
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20 ms @ T_L ≤ 25°C
IEC 61000−4−2 (ESD)
Symbol
Value
Unit
P_pk
350
W
Air
Contact
±30
kV
±30
IEC 61000−4−4 (EFT)
40
A
Total Device Dissipation FR−5 Board,
(Note 1) @ T_A = 25°C
Derate above 25°C
P_D
200
mW
1.5
mW/°C
Thermal Resistance from Junction−to−Ambient
R_qJA
635
°C/W
Junction and Storage Temperature Range
T_J, T_stg
−65 to +150
°C
Lead Solder Temperature − Maximum (10 Second Duration)
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum Solder Footprint.
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
V_C
V_RWM
I_R
V_BR
I_T
QV_BR
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I_PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V_RWM
Breakdown Voltage @ I_T
Test Current
Maximum Temperature Variation of V_BR
I
I_PP
I_T
V_C V_BR V_RWM I_R
II_RT
V
V_RWM V_BR V_C
I_PP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (T_J = 25°C, unless otherwise specified)
Parameter
Conditions
Symbol Min
Typ
Max Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Additional Clamping Voltage
(Note 2)
I_T = 1 mA, (Note 3)
V_RWM = 12 V
I_PP = 5 A, (8 x 20 msec Waveform)
I_PP = 15 A, (8 x 20 msec Waveform)
V_RWM
V_BR
I_R
V_C
13.3
12
V
V
1.0 mA
19
V
24
Maximum Peak Pulse Current
8 x 20 msec Waveform
I_PP
15
A
Capacitance
V_R = 0 V, f = 1 MHz
C_j
64
pF
V_R = 12 V, f = 1 MHz
36
2. TVS devices are normally selected according to the working peak reverse voltage (V_RWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V_BR is measured at pulse test current I_T.
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