SD12CT1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Transient Voltage Suppressor(Bi-directional ESD Protection with Ultra Low Clamping Voltage)

SD12CT1
MAXIMUM RATINGS
Peak Power Dissipation @ 20 ms
@ T_L ≤ 25°C
IEC 61000−4−2 (ESD)
Rating
Symbol
Value
Unit
P_pk
350
W
Air
Contact
±30
kV
±30
IEC 61000−4−4 (EFT)
40
A
Storage Temperature Range
T_stg
−55 to +150
°C
Operating Temperature Range
T_J
−55 to +125
°C
Lead Solder Temperature − Maximum (10 Second Duration)
T_L
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
I_PP
Parameter
Maximum Reverse Peak Pulse Current
I
I_PP
V_C
V_RWM
I_R
V_BR
Clamping Voltage @ I_PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V_RWM
Breakdown Voltage @ I_T
V_C V_BR V_RWM II_RT
II_RT
V
V_RWM V_BR V_C
I_T
Test Current
QV_BR Maximum Temperature Variation of V_BR
I_PP
ELECTRICAL CHARACTERISTICS (T_J = 25°C, unless otherwise specified)
Parameter
Conditions
Bi−Directional TVS
Symbol Min
Typ
Max Unit
Reverse Working Voltage
(Note 1)
V_RWM
12
V
Breakdown Voltage
I_T = 1 mA, (Note 2)
V_BR
13.3
V
Reverse Leakage Current
V_RWM = 12 V
I_R
1.0 mA
Clamping Voltage
Additional Clamping Voltage
I_PP = 5 A, (8 x 20 msec Waveform)
V_C
I_PP = 15 A, (8 x 20 msec Waveform)
19
V
24
Maximum Peak Pulse Current
8 x 20 msec Waveform
I_PP
15
A
Capacitance
V_R = 0 V, f = 1 MHz
C_j
64
pF
V_R = 12 V, f = 1 MHz
36
1. TVS devices are normally selected according to the working peak reverse voltage (V_RWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. V_BR is measured at pulse test current I_T.
http://onsemi.com
2