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SD05T1_14 Datasheet, PDF (2/4 Pages) ON Semiconductor – Transient Voltage Suppressor Diode | |||
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SD05T1 Series, SZSD05T1 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ⤠25°C
IEC 61000â4â2 (ESD)
Ppk
Air
Contact
350
Watts
±15
kV
±8.0
IEC 61000â4â4 (EFT)
40
A
ESD Voltage (Human Body Model (HBM) Waveform per IEC 61000â4â2)
Total Power Dissipation on FRâ4 Board (Note 2) @ TA = 25°C
Derate above 25°C
VPP
°PD°
30
kV
300
°mW°
2.4
mW/°C
Thermal Resistance, JunctionâtoâAmbient
RqJA
416
°C/W
Junction and Storage Temperature Range
TJ, Tstg
â55 to +150
°C
Lead Solder Temperature â Maximum (10 Second Duration)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Nonrepetitive current pulse, per Figure 6.
2. FRâ4 printed circuit board, singleâsided copper, mounting pad 1 cm2.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniâDirectional TVS
ELECTRICAL CHARACTERISTICS
Device
VRWM
(V)
VBR, Breakdown Voltage
(V)
VC @ IPP = 5 A
IR @ VRWM
IT
(Note 3)
(mA)
Min
Max
mA
(V)
Max IPP
(Note 3)
(A)
VC @ Max IPP
(Note 3)
(V)
Max
Capacitance
(pF)
VR = 0 V
f = 1.0 MHz
SD05T1G
5.0
10
6.2
7.3
1.0
9.8
24
14.5
350
SD12T1G
12
1.0
13.3
15.75
1.0
19
15
25
150
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. 8 Ã 20 ms pulse waveform.
*Include SZâprefix devices where applicable.
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