SBR80520LT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R, T_L = 90C)
V_RRM
20
V
V_RWM
V_R
I_F(AV)
A
0.5
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I_FSM
A
5.5
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V_R)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
T_stg
T_J
dv/dt
−65 to +150
−65 to +125
1000
> 400
> 8000
C
C
V/ms
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance; Junction−to−Ambient (Note 1)
Thermal Resistance; Junction−to−Lead
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol
R_qJA
R_qJL
Value
206
150
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i_F = 0.1 Amps)
(i_F = 0.5 Amps)
Maximum Instantaneous Reverse Current (Note 2)
(V_R = 10 V)
(Rated DC Voltage = 20 V)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2%.
Symbol
Value
Unit
v_F
T_J = 25C
T_J = 100C
V
0.300
0.385
0.220
0.330
I_R
T_J = 25C
T_J = 100C
mA
75 mA
250 mA
5 mA
8 mA
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