SBE818 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – 30V, 2.0A Rectifi er

SBE818
Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
VF3
IR
C
trr
Rth(j-a)1
Rth(j-a)2
Conditions
IR=1mA
IF=1.0A
IF=1.5A
IF=2.0A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted in Cu-foiled area of
0.96mm²Ã—0.03mm on glass epoxy substrate
When mounted on ceramic substrate (900mm²Ã—0.8mm)
min
30
Ratings
typ
0.48
0.53
0.57
30
100
65
Unit
max
V
0.53
V
0.58
V
0.62
V
7.5
μA
pF
10
ns
°C / W
°C / W
trr Test Circuit
Duty≤10%
50Ω
100Ω
10Ω
10μs
--5V
trr
Ordering Information
Device
SBE818-TL-E
Package
EMH8
Shipping
3,000pcs./reel
memo
Pb Free
No. A1379-2/6