SBE808 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Schottky Barrier Diode 15V, 1A Rectifier

SBE808
Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
Conditions
IR=0.1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (600mm²Ã—0.8mm)
min
15
Ratings
typ
0.43
0.49
20
185
max
0.48
0.54
3.0
10
Unit
V
V
V
mA
pF
ns
°C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
trr Test Circuit
Duty≤10%
50Ω
100Ω
10Ω
10ms
--5V
trr
Ordering Information
Device
SBE808-TL-E
SBE808-TL-W
Package
MCPH5
MCPH5
Shipping
3,000pcs./reel
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
10
IF -- VF
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Forward Voltage, VF -- V
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0.7
PF(AV) -- IO
(1)Rectangular wave θ=60°
0.6
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(1) (2) (4) (3)
(4)Sine wave θ=180°
0.5
0.4
0.3
Rectangular wave
0.2
θ
Sine wave
360°
0.1
180°
0
360°
0
0.2
0.4
0.6
0.8
1.0
1.2
Average Output Current, IO -- A
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10000
1000
100
10
IR -- VR
Ta=150°C
125°C
100°C
75°C
50°C
1.0
25°C
0.1
0°C
0.01
0.001
--25^°C
0.0001
0
2
4
6
8
10
12
Reverse Voltage, VR -- V
1.2E--05
PR(AV) -- VRM
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
1.0E--05 (3)Rectangular wave θ=180°
(4)Sine wave θ=180°
8.0E--06 Rweacvteangular
6.0E--06
VR
θ
360°
4.0E--06 Sine wave
VR
180°
2.0E--06
360°
14
16
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(1)
(2)
(3)
(4)
0.0E+00
0
2
4
6
8
10
12
14
16
Peak Reverse Voltage, VRM -- V IT11246
No. A0451-2/4