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SBCP53T1G Datasheet, PDF (2/5 Pages) ON Semiconductor – PNP Silicon Epitaxial Transistors
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BCP53 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−100
−
Vdc
−
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
− 80
−
Vdc
−
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, RBE = 1.0 kW)
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)CER
−100
−
V(BR)EBO
− 5.0
−
Vdc
−
Vdc
−
Collector−Base Cutoff Current
(VCB = − 30 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = − 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
ICBO
−
IEBO
−
nAdc
−
−100
mAdc
−
−10
DC Current Gain
(IC = − 5.0 mAdc, VCE = − 2.0 Vdc)
All Part Types
(IC = −150 mAdc, VCE = − 2.0 Vdc)
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
All Part Types
hFE
−
25
−
−
40
−
250
63
−
160
100
−
250
25
−
−
Collector−Emitter Saturation Voltage
(IC = − 500 mAdc, IB = − 50 mAdc)
VCE(sat)
−
Vdc
−
− 0.5
Base−Emitter On Voltage
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
VBE(on)
−
Vdc
−
−1.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz)
fT
MHz
−
50
−
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