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SBC847CWT1G Datasheet, PDF (2/13 Pages) ON Semiconductor – General Purpose Transistors
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BC846, SBC846, BC847, SBC847, BC848 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series V(BR)CEO 65
−
−
V
BC847, SBC847 Series
45
−
−
BC848 Series
30
−
−
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series V(BR)CES
80
−
−
V
BC847, SBC847 Series
50
−
−
BC848 Series
30
−
−
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series V(BR)CBO 80
−
−
V
BC847, SBC847 Series
50
−
−
BC848 Series
30
−
−
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series V(BR)EBO 6.0
−
−
V
BC847, SBC847 Series
6.0
−
−
BC848 Series
5.0
−
−
Collector Cutoff Current (VCB = 30 V)
ON CHARACTERISTICS
(VCB = 30 V, TA = 150°C)
ICBO
−
−
15 nA
−
−
5.0 mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846A, BC847A, SBC847A, BC848A
hFE
BC846B, SBC846B, BC847B, SBC847B, BC848B
BC847C, SBC847C, BC848C
−
90
−
−
−
150
−
−
270
−
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, SBC847A, BC848A
BC846B, SBC846B, BC847B, SBC847B, BC848B
BC847C, SBC847C, BC848C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
NF
110 180 220
200 290 450
420 520 800
−
− 0.25 V
−
−
0.6
−
0.7
−
V
−
0.9
−
580 660 700 mV
−
−
770
100
−
− MHz
−
−
4.5 pF
−
−
10 dB
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