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SBAV99WT1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual Series Switching Diodes
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BAV99WT1, SBAV99WT1G, BAV99RWT1, SBAV99RWT1G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
200
1.6
625
300
2.4
417
−65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mA)
V(BR)
100
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
IR
−
−
−
CD
−
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W
VF
−
−
−
−
trr
−
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
VFR
−
Max
−
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
mAdc
pF
mVdc
ns
V
820 W
+10 V
2k
100 mH IF
0.1 mF
0.1 mF
tr
tp
t
IF
10%
trr
t
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: (c) tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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