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| SBAV199LT1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Dual Series Switching Diode | |||
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BAV199LT1G, SBAV199LT1G, SBAV199LT3G
ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
V(BR)
70
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150ï°C)
IR
â
â
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
â
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
VF
â
â
â
â
trr
â
Max
â
5.0
80
2.0
900
1000
1100
1250
3.0
Unit
Vdc
nAdc
pF
mVdc
ms
820ï W
+10 V
2.0 k
100 mH IF
0.1 mF
DUT
50 W OUTPUT
PULSE
GENERATOR
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
1,000
100
10
1
0.1
0
TYPICAL CHARACTERISTICS
1.2
1.0
TA = 25ï°C
0.8
150ï°C 25ï°C
â55ï°C
0.6
0.4
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (V)
Figure 2. Forward Voltage
0.2
0
0 10 20 30 40 50 60 70 80
VR, REVERSE VOLTAGE (V)
Figure 3. Capacitance
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