SBAT54CLT1G Datasheet, PDF(2/4 Page) ON Semiconductor – Dual Common Cathode Schottky Barrier Diodes

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SBAT54CLT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual Common Cathode Schottky Barrier Diodes

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BAT54CLT1G, SBAT54CLT1G

ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

7.6

Reverse Leakage

(VR = 25 V)

0.5

2.0

Forward Voltage

(IF = 0.1 mAdc)

0.22

0.24

Forward Voltage

(IF = 30 mAdc)

0.41

0.5

Forward Voltage

(IF = 100 mAdc)

0.52

0.8

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)

trr

5.0

Forward Voltage

(IF = 1.0 mAdc)

0.29

0.32

Forward Voltage

(IF = 10 mAdc)

0.35

0.40

820 W

+10 V

100 mH IF

0.1 mF

10%

trr

50 W OUTPUT

PULSE

GENERATOR

DUT

50 W INPUT

SAMPLING

OSCILLOSCOPE VR

90%

INPUT SIGNAL

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp Â» trr

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

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