SB80W06T-TL-H Datasheet, PDF (2/7 Pages) ON Semiconductor – Schottky Barrier Diode 60V, 8A, Low IR, Monolithic Dual TP Common Cathode

Continued from preceding page.
Parameter
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Note) *1. Indicates the total value
*2. Value per element
SB80W06T
Symbol
I_O*2
I_O*1
I_FSM
Tj
Tstg
Conditions
50Hz resistive load, sine wave Tc=130°C
50Hz resistive load, sine wave Tc=83°C
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Transient Thermal Resistance
Note) *2. Value per element
Symbol
VR
VF
IR
C
Rth(j-c)
Conditions
IR=1mA, Tj=25°C *2
IF=3.0A, Tj=25°C *2
VR=30V, Tj=25°C *2
VR=10V, Tj=25°C *2
Junction-Case : Smoothed DC
Ratings
Unit
4
A
8
A
40
A
--55 to +150
°C
--55 to +150
°C
min
60
Ratings
typ
130
6
max
0.6
0.1
Unit
V
V
mA
pF
°C / W
Ordering Information
Device
SB80W06T-H
SB80W06T-TL-H
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
memo
Pb Free and Halogen Free
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
175
IF -- VF
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward Voltage, VF -- V
Tc -- IO
IT14732
150
125
100
(1)Rectangular wave θ=60°
75 ^{(2)Rectangular wave θ=120°}
(1)
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
50 ^(5)DC
0
1
2
3
4
5
6
7
Average Output Current, IO -- A
(5)
(3)
(4)
(2)
8
9
IT14734
1E+04
1E+03
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
0
7
5
3
2
IR -- VR
Ta=150^°C
125°^C
100^°C
75°^C
50°C
25°^C
0°C
--25^°C
10
20
30
40
50
60
70
Reverse Voltage, VR -- V
C -- VR
IT14733
f=100kHz
100
7
5
3
1.0
23
5 7 ₁₀
23
Reverse Voltage, VR -- V
5 7 ₁₀₀
IT08567
No. A1505-2/7