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PZTA42T1G_16 Datasheet, PDF (2/4 Pages) ON Semiconductor – High Voltage Transistor Surface Mount
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PZTA42T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
300
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
6.0
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
−
Emitter-Base Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
−
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
hFE
25
40
40
DYNAMIC CHARACTERISTICS
Current-Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
50
Feedback Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Cre
−
Collector-Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
−
Base-Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
3. Pulse Test Conditions, tp = 300 ms, d 0.02.
VBE(sat)
−
120
100
80
60
40
20
0
0.1
TJ = +125°C
25°C
-55°C
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Max
Unit
Vdc
−
Vdc
−
Vdc
−
mAdc
0.1
mAdc
0.1
−
−
−
−
MHz
−
pF
3.0
Vdc
0.5
Vdc
0.9
VCE = 10 Vdc
100
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