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PZT651 Datasheet, PDF (2/4 Pages) ON Semiconductor – NPN Silicon Planar Epitaxial Transistor
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PZT651
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector−Emitter Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base−Emitter Cutoff Current
(VEB = 4.0 Vdc)
Collector−Base Cutoff Current
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 50 mAdc, VCE = 2.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
Collector−Emitter Saturation Voltages
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
Base−Emitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
Base−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
Current−Gain — Bandwidth
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%
Symbol
Min
V(BR)CEO
60
V(BR)CBO
80
V(BR)EBO
5.0
IEBO
−
ICBO
−
hFE
75
75
75
40
VCE(sat)
−
−
VBE(on)
−
VBE(sat)
−
fT
75
Max
Unit
Vdc
−
Vdc
−
Vdc
−
mAdc
0.1
nAdc
100
−
−
−
−
−
Vdc
0.5
0.3
Vdc
1.0
Vdc
1.2
MHz
−
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