PZT2907AT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT

PZT2907AT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min
Typ
Max Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = – 0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = – 500 mAdc, VCE = –10 Vdc)
Collector-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = – 50 mAdc)
Base-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = – 50 mAdc)
DYNAMIC CHARACTERISTICS
hFE
—
75
—
—
100
—
—
100
—
—
100
—
300
50
—
—
VCE(sat)
—
—
Vdc
—
– 0.4
—
–1.6
VBE(sat)
—
—
Vdc
—
–1.3
—
– 2.6
Current-Gain — Bandwidth Product (IC = – 50 mAdc, VCE = – 20 Vdc, f = 100 MHz)
fT
200
—
—
MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cc
—
—
8.0
pF
Input Capacitance (VEB = – 2.0 Vdc, IC = 0, f = 1.0 MHz)
Ce
—
—
30
pF
SWITCHING TIMES
Turn-On Time
Delay Time
Rise Time
(VCC = – 30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
ton
—
—
45
ns
td
—
—
10
tr
—
—
40
Turn-Off Time
Storage Time
Fall Time
(VCC = – 6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.
toff
—
—
100
ns
ts
—
—
80
tf
—
—
30
INPUT
Zo = 50 Ω
PRF = 150 Hz
RISE TIME ≤ 2.0 ns
0
– 16 V
200 ns
– 30 V
1.0 k
50
200
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Zo = 50 Ω
PRF = 150 Hz
RISE TIME ≤ 2.0 ns
0
– 30 V
200 ns
+15 V – 6.0 V
1.0 k
1.0 k
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
50
1N916
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data