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PZT2907A Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP switching transistor
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PZT2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
− 60
−
Vdc
−
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
− 60
−
Vdc
−
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
− 5.0
−
Vdc
−
Collector−Base Cutoff Current
(VCB = − 50 Vdc, IE = 0)
ICBO
−
nAdc
−
−10
Collector−Emitter Cutoff Current
(VCE = − 30 Vdc, VBE = 0.5 Vdc)
ICEX
−
nAdc
−
− 50
Base−Emitter Cutoff Current
(VCE = − 30 Vdc, VBE = − 0.5 Vdc)
IBEX
−
nAdc
−
− 50
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = − 0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = − 500 mAdc, VCE = −10 Vdc)
hFE
75
−
−
−
100
−
−
100
−
−
100
−
300
50
−
−
Collector-Emitter Saturation Voltages
(IC = −150 mAdc, IB = −15 mAdc)
(IC = − 500 mAdc, IB = −50 mAdc)
VCE(sat)
−
−
Vdc
−
− 0.4
−
−1.6
Base-Emitter Saturation Voltages
(IC = −150 mAdc, IB = −15 mAdc)
(IC = − 500 mAdc, IB = − 50 mAdc)
VBE(sat)
−
−
Vdc
−
−1.3
−
− 2.6
DYNAMIC CHARACTERISTICS
Current-Gain − Bandwidth Product
(IC = − 50 mAdc, VCE = − 20 Vdc, f = 100 MHz)
fT
200
−
MHz
−
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cc
−
pF
−
8.0
Input Capacitance
(VEB = − 2.0 Vdc, IC = 0, f = 1.0 MHz)
Ce
−
pF
−
30
SWITCHING TIMES
Turn-On Time
Delay Time
Rise Time
ton
−
(VCC = − 30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
td
−
tr
−
Turn-Off Time
Storage Time
Fall Time
toff
−
(VCC = − 6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
ts
−
tf
−
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
−
45
ns
−
10
−
40
−
100
ns
−
80
−
30
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