NVTFS5C673NL Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET

NVTFS5C673NL
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
V_(BR)DSS
V_(BR)DSS/
T_J
I_DSS
I_GSS
V_GS = 0 V, I_D = 250 mA
60
V_GS = 0 V,
V_DS = 60 V
T_J = 25°C
T_J = 125°C
V_DS = 0 V, V_GS = 20 V
V
28
mV/°C
10
mA
250
100
nA
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
V_GS(TH)
V_GS(TH)/T_J
R_DS(on)
g_FS
V_GS = V_DS, I_D = 250 mA
V_GS = 10 V
I_D = 25 A
V_GS = 4.5 V
I_D = 25 A
V_DS =15 V, I_D = 25 A
1.2
2.0
V
−4.5
mV/°C
8.1
9.8
mW
12
15
37
S
Input Capacitance
C_ISS
880
Output Capacitance
C_OSS
V_GS = 0 V, f = 1 MHz, V_DS = 25 V
450
pF
Reverse Transfer Capacitance
C_RSS
11
Total Gate Charge
Q_G(TOT)
V_GS = 4.5 V, V_DS = 48 V; I_D = 25 A
4.5
nC
Total Gate Charge
Q_G(TOT)
V_GS = 10 V, V_DS = 48 V; I_D = 25 A
9.5
nC
Threshold Gate Charge
Q_G(TH)
1.0
Gate−to−Source Charge
Gate−to−Drain Charge
Q_GS
2.0
nC
Q_GD
V_GS = 10 V, V_DS = 48 V; I_D = 25 A
0.8
Plateau Voltage
V_GP
2.9
V
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t_d(ON)
Rise Time
t_r
Turn−Off Delay Time
t_d(OFF)
Fall Time
t_f
DRAIN−SOURCE DIODE CHARACTERISTICS
V_GS = 10 V, V_DS = 48 V,
I_D = 25 A, R_G = 2.5 W
6.0
25
ns
16
2.0
Forward Diode Voltage
V_SD
V_GS = 0 V,
T_J = 25°C
I_S = 25 A
T_J = 125°C
0.9
1.2
V
0.8
Reverse Recovery Time
t_RR
28
Charge Time
Discharge Time
t_a
V_GS = 0 V, dIs/dt = 100 A/ms,
t_b
I_S = 25 A
14
ns
14
Reverse Recovery Charge
Q_RR
18
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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