NVD5865NLT4G Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET 60 V, 46 A, 16 m, Single N−Channel

NVD5865NL
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V_(BR)DSS
V_GS = 0 V, I_D = 250 mA
60
Drain−to−Source Breakdown Voltage V_(BR)DSS/T_J
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
I_DSS
I_GSS
V_GS(TH)
V_GS(TH)/T_J
V_GS = 0 V,
V_DS = 60 V
T_J = 25°C
T_J = 125°C
V_DS = 0 V, V_GS = ±20 V
V_GS = V_DS, I_D = 250 mA
1.0
Drain−to−Source On Resistance
Drain−to−Source on Resistance
Forward Transconductance
R_DS(on)
R_DS(on)
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
V_GS = 10 V, I_D = 19 A
V_GS = 4.5 V, I_D = 19 A
V_DS = 15 V, I_D = 19 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
C_iss
C_oss
C_rss
Q_G(TOT)
Q_G(TH)
Q_GS
Q_GD
Q_G(TOT)
Gate Resistance
R_G
SWITCHING CHARACTERISTICS (Note 5)
V_GS = 0 V, f = 1.0 MHz,
V_DS = 25 V
V_GS = 10 V, V_DS = 48 V,
I_D = 38 A
V_GS = 4.5 V, V_DS = 48 V,
I_D = 38 A
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_GS = 10 V, V_DD = 48 V,
I_D = 38 A, R_G = 2.5 W
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
V_SD
V_GS = 0 V,
T_J = 25°C
I_S = 38 A
T_J = 125°C
t_RR
ta
V_GS = 0 V, dIs/dt = 100 A/ms,
tb
I_S = 38 A
Reverse Recovery Charge
Q_RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
Typ
Max
Unit
V
55
mV/°C
1.0
mA
100
±100
nA
2.0
V
5.6
mV/°C
13
16
mW
16
19
mW
15
S
1400
pF
137
95
29
nC
1.1
4
8
15
nC
1.3
W
8.4
ns
12.4
26
4.4
0.95
1.2
V
0.85
20
ns
13
7
13
nC
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