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NVD5865NL Datasheet, PDF (2/6 Pages) ON Semiconductor – Single N−Channel Power MOSFET | |||
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NVD5865NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
DrainâtoâSource Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
DrainâtoâSource Breakdown Voltage V(BR)DSS/TJ
Temperature Coefficient
Zero Gate Voltage Drain Current
GateâtoâSource Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
IDSS
IGSS
VGS(TH)
VGS(TH)/TJ
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
VGS = VDS, ID = 250 mA
1.0
DrainâtoâSource On Resistance
DrainâtoâSource on Resistance
Forward Transconductance
RDS(on)
RDS(on)
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = 10 V, ID = 19 A
VGS = 4.5 V, ID = 19 A
VDS = 15 V, ID = 19 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GateâtoâSource Charge
GateâtoâDrain Charge
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 5)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 48 V,
ID = 38 A
VGS = 4.5 V, VDS = 48 V,
ID = 38 A
TurnâOn Delay Time
Rise Time
TurnâOff Delay Time
Fall Time
td(on)
tr
td(off)
tf
VGS = 10 V, VDD = 48 V,
ID = 38 A, RG = 2.5 W
DRAINâSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 38 A
TJ = 125°C
tRR
ta
VGS = 0 V, dIs/dt = 100 A/ms,
tb
IS = 38 A
Reverse Recovery Charge
QRR
4. Pulse Test: Pulse Width ⤠300 ms, Duty Cycle ⤠2%.
5. Switching characteristics are independent of operating junction temperatures.
Typ
Max
Unit
V
55
mV/°C
1.0
mA
100
±100
nA
2.0
V
5.6
mV/°C
13
16
mW
16
19
mW
15
S
1400
pF
137
95
29
nC
1.1
4
8
15
nC
1.3
W
8.4
ns
12.4
26
4.4
0.95
1.2
V
0.85
20
ns
13
7
13
nC
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