NVATS5A112PLZ Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET

NVATS5A112PLZ
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 5)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1 A
Gate to Source Leakage Current
IGSS
VGS = 16 V, VDS = 0 V
10 A
Gate Threshold Voltage
VGS(th)
VDS = 10 V, ID = 1 mA
1.2
2.6 V
Forward Transconductance
gFS
VDS = 10 V, ID = 13 A
24
S
Static Drain to Source On-State
Resistance
RDS(on)
ID = 13 A, VGS = 10 V
ID = 7 A, VGS = 4.5 V
ID = 3.5 A, VGS = 4 V
33
43 m
42
59 m
45
63 m
Input Capacitance
Ciss
1,450
pF
Output Capacitance
Coss
VDS = 20 V, f = 1 MHz
155
pF
Reverse Transfer Capacitance
Crss
125
pF
Turn-ON Delay Time
td(on)
10
ns
Rise Time
Turn-OFF Delay Time
tr
td(off)
See Fig.1
80
ns
150
ns
Fall Time
tf
120
ns
Total Gate Charge
Qg
33.5
nC
Gate to Source Charge
Qgs
VDS = 30 V, VGS = 10 V, ID = 25 A
5.3
nC
Gate to Drain “Miller” Charge
Qgd
7.9
nC
Forward Diode Voltage
VSD
IS = 25 A, VGS = 0 V
0.97
1.5 V
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
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