NUP4004M5 Datasheet, PDF (2/3 Pages) ON Semiconductor – 5−Pin Bi−Directional Quad TVS Array

NUP4004M5
ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)
Parameter
Conditions
Symbol Min
Typ
Max Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Capacitance
(Note 1)
I_T = 1 mA, (Note 2)
V_RWM = 5 V
V_R = −3 V, f = 1 MHz
(Line to GND)
V_RWM
V_BR
I_R
C_j
6.0
V
7.0
8.0
V
100 1000 nA
23
pF
Capacitance
V_R = 3 V, f = 1 MHz
C_j
(Line to GND)
32
pF
1. TVS devices are normally selected according to the working peak reverse voltage (V_RWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. V_BR is measured at pulse test current I_T.
110
100
90
80
70
60
50
40
30
20
10
0
0
TYPICAL PERFORMANCE CURVES
(T_J = 25°C unless otherwise specified)
c−t
t_d = I_PP/2
WAVEFORM
PARAMETERS
t_r = 8 ms
t_d = 20 ms
5
10
15
20
25
30
t, TIME (ms)
Figure 1. Pulse Waveform
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Figure 2. Power Derating Curve
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