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| NUF6400MN Datasheet, PDF (2/6 Pages) ON Semiconductor – 6-Channel EMI Filter with Integrated ESD Protection | |||
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NUF6400MN
1 2 3 4 56
GND
12 11 10 9 8 7
(Bottom View)
Figure 3. Pin Diagram
Table 1. FUNCTIONAL PIN DESCRIPTION
Filter
Device Pins
Filter 1
1 & 12
Filter 2
2 & 11
Filter 3
3 & 10
Filter 4
4&9
Filter 5
5&8
Filter 6
6&7
Ground Pad
GND
Filter + ESD Channel 1
Filter + ESD Channel 2
Filter + ESD Channel 3
Filter + ESD Channel 4
Filter + ESD Channel 4
Filter + ESD Channel 4
Ground
Description
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000â4â2
Contact Discharge
VPP
8.0
kV
DC Power per Package
PR
100
mW
DC Power per Package
PT
600
mW
Operating Temperature Range
TOP
â40 to 85
°C
Storage Temperature Range
TSTG
â55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
VRWM
5.0
V
Breakdown Voltage
VBR
IR = 1.0 mA
6.0
7.0
8.0
V
Leakage Current
IR
VRWM = 3.0 V
100
nA
Resistance
RA
IR = 20 mA
85
100
115
W
Diode Capacitance
Cd
VR = 2.5 V, f = 1.0 MHz
50
75
pF
Line Capacitance
CL
VR = 2.5 V, f = 1.0 MHz
100
150
pF
3 dB CutâOff Frequency (Note 1)
f3dB
Above this frequency,
35
appreciable attenuation occurs
MHz
6 dB CutâOff Frequency (Note 1)
f6dB
Above this frequency,
70
appreciable attenuation occurs
MHz
1. 50 W source and 50 W load termination.
http://onsemi.com
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