NUF2441FC Datasheet, PDF (2/4 Pages) ON Semiconductor – Integrated Passive Filter with ESD Protection

NUF2441FC
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Device
Device
Marking
V_RWM
(Volts)
V_BR @
1 mA
(Volts)
Min Max
Max I_R @
V_RWM = 12 V
I/O Pin
(mA)
NUF2441FCT1G
2441
12 13.7 17.7
0.1
1. Measured at 25°C, V_R = 0, f = 1 MHz, Source A1, GND A2, Open A3.
2. Measured at room temperature.
3. Tolerance = ±20%.
4. Measured under zero light conditions.
Typical
Capacitance
C₁ + C₂ (pF)
(Notes 1, 3, 4)
250
Typical
Pass−Band
Inductance
L (nH)
2.9
Equivalent
Series Resistance
R_S (W) (Note 2)
Typ
Max
0.28
0.35
5
0
−5
−10
−15
−20
−25
−30
−35
−40
1.0E+06
1.0E+07
1.0E+08
1.0E+09
FREQUENCY (Hz)
1.0E+10
Figure 1. Insertion Loss Characteristic
0
−10
−20
−30
−40
−50
−60
1.0E+06
1.0E+07
1.0E+08
1.0E+09
FREQUENCY (Hz)
Figure 2. Analog Crosstalk
1.0E+10
300
250
200
150
100
50
0
0
2
4
6
8
10
12
14
REVERSE VOLTAGE (V)
Figure 3. Typical Line Capacitance vs. Reverse
Bias Voltage
0.35
0.34
0.33
0.32
0.31
0.30
0.29
0.28
0.27
0.26
0.25
0 10 20 30 40 50 60 70 80 90
TEMPERATURE (°C)
Figure 4. Typical Resistance vs. Temperature
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