NTTFS3A08PZTAG Datasheet, PDF (2/6 Pages) ON Semiconductor – -20 V, -15 A, Single P-Channel, 8FL

NTTFS3A08PZ
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State (Note 3)
R_qJA
Junction−to−Ambient – Steady State (Note 4)
R_qJA
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
R_qJA
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm², 1 oz. Cu).
Value
55
148
26
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V_(BR)DSS
V_(BR)DSS/T_J
V_GS = 0 V, I_D = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
I_DSS
I_GSS
V_GS = 0 V,
V_DS = −16 V
T_J = 25°C
V_DS = 0 V, V_GS = ±5 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V_GS(TH)
V_GS(TH)/T_J
V_GS = V_DS, I_D = −250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
R_DS(on)
g_FS
V_GS = −4.5 V
I_D = −12 A
V_GS = −2.5 V
I_D = −10 A
V_DS = −1.5 V, I_D = −8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 6)
C_iss
C_oss
C_rss
Q_G(TOT)
Q_G(TH)
Q_GS
Q_GD
V_GS = 0 V, f = 1.0 MHz, V_DS = −10 V
V_GS = −4.5 V, V_DS = −10 V, I_D = −8 A
Turn−On Delay Time
t_d(on)
Rise Time
t_r
Turn−Off Delay Time
t_d(off)
Fall Time
t_f
DRAIN−SOURCE DIODE CHARACTERISTICS
V_GS = −4.5 V, V_DS = −10 V,
I_D = −8 A, R_G = 6.0 W
Forward Diode Voltage
V_SD
V_GS = 0 V,
I_S = −3 A
T_J = 25°C
Reverse Recovery Time
t_RR
Charge Time
Discharge Time
t_a
V_GS = 0 V, d_IS/d_t = 100 A/ms,
t_b
I_S = −6 A
Reverse Recovery Charge
Q_RR
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
−20
−0.4
Typ
6
3.3
4.9
6.9
62
5000
600
540
56
2.0
6.5
15.4
13
60
250
170
−0.65
207
45
162
234
Max Unit
V
mV/°C
−1
mA
±5
mA
−1.0
V
mV/°C
6.7
mW
9.0
S
pF
nC
ns
−1.0
V
ns
nC
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