NTSJ30U100CTG Datasheet, PDF (2/8 Pages) ON Semiconductor – Very Low Forward Voltage Trench-based Schottky Rectifier

NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R, T_C = 125°C)
V_RRM
100
V
V_RWM
V_R
I_F(AV)
A
Per device
30
Per diode
15
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20 kHz, T_C = 120°C)
I_FRM
A
Per device
60
Per diode
30
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I_FSM
160
A
Operating Junction Temperature
T_J
−40 to +150
°C
Storage Temperature
T_stg
−40 to +150
°C
Voltage Rate of Change (Rated V_R)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
R_qJC
R_qJA
NTST30U100CTG,
NTSB30U100CT−1G
2.5
70
NTSB30U100CTG NTSJ30U100CTG
0.93
3.81
46.5
105
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(I_F = 5 A, T_J = 25°C)
(I_F = 7.5 A, T_J = 25°C)
(I_F = 15 A, T_J = 25°C)
(I_F = 5 A, T_J = 125°C)
(I_F = 7.5 A, T_J = 125°C)
(I_F = 15 A, T_J = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(V_R = 70 V, T_J = 25°C)
(V_R = 70 V, T_J = 125°C)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 125°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
Symbol Typ
v_F
0.47
0.52
0.66
0.42
0.48
0.60
I_R
15
12
65
32
Max
Unit
V
−
−
0.80
−
−
0.65
mA
mA
675
mA
60
mA
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