NTND31225CZ Datasheet, PDF (2/8 Pages) ON Semiconductor – Small Signal MOSFET

NTND31225CZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Junction-to-Ambient (Note 2)
Steady State
t≤5s
R_qJA
998
751
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq), 1 oz copper
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
FET
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS
V_(BR)DSS
N
P
I_DSS
N
P
I_GSS
N
P
V_GS = 0 V, I_D = 250 mA
20
V_GS = 0 V, I_D = −250 mA
−20
V_GS = 0 V,
V_DS = 5 V
T_J = 25°C
T_J = 85°C
V_GS = 0 V,
V_DS = 16 V
T_J = 25°C
V_GS = 0 V,
V_DS = −5 V
T_J = 25°C
T_J = 85°C
V_GS = 0 V,
V_DS = −16 V
T_J = 25°C
V_GS = 0 V, V_DS = ±5 V
V_GS = 0 V, V_DS = ±5 V
V
50
nA
200
100
−50
−200
−100
±100 nA
±100
Gate Threshold Voltage
V_GS(TH)
N
V_GS = V_DS, I_D = 250 mA
0.4
1.0
V
P
V_GS = V_DS, I_D = −250 mA
−0.4
−1.0
Drain-to-Source On Resistance
R_DS(ON)
N
V_GS = 4.5 V, I_D = 100 mA
0.8 1.5
W
V_GS = 2.5 V, I_D = 50 mA
1.1 2.0
V_GS = 1.8 V, I_D = 20 mA
1.4 3.0
V_GS = 1.5 V, I_D = 10 mA
1.8 4.5
P
V_GS = −4.5 V, I_D = −100 mA
2.1 5.0
V_GS = −2.5 V, I_D = −50 mA
2.7 6.0
V_GS = −1.8 V, I_D = −20 mA
3.6 7.0
V_GS = −1.5 V, I_D = −10 mA
4.2 10.0
Forward Transconductance
g_FS
N
V_DS = 5 V, I_D = 125 mA
0.48
S
P
V_DS = −5 V, I_D = −125 mA
0.35
Forward Diode Voltage
V_SD
N
V_GS = 0 V, I_S = 10 mA
0.6 1.0
V
P
V_GS = 0 V, I_S = −10 mA
−0.6 −1.0
3. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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