NTMFS5834NL_13 Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET 40 V, 75 A, 9.3 m, Single N.Channel

NTMFS5834NL, NVMFS5834NL
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm²) pad size.
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V_(BR)DSS
V_GS = 0 V, I_D = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V_(BR)DSS/
T_J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
I_DSS
I_GSS
V_GS = 0 V,
V_DS = 40 V
T_J = 25 °C
T_J = 125°C
V_DS = 0 V, V_GS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V_GS(TH)
V_GS(TH)/T_J
R_DS(on)
Forward Transconductance
g_FS
CHARGES, CAPACITANCES & GATE RESISTANCE
V_GS = V_DS, I_D = 250 mA
1.0
V_GS = 10 V
I_D = 20 A
V_GS = 4.5 V
I_D = 20 A
V_DS = 5 V, I_D = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS (Note 4)
C_ISS
C_OSS
C_RSS
Q_G(TOT)
Q_G(TOT)
Q_G(TH)
Q_GS
Q_GD
V_GP
R_G
V_GS = 0 V, f = 1 MHz, V_DS = 20 V
V_GS = 10 V, V_DS = 20 V; I_D = 20 A
V_GS = 4.5 V, V_DS = 20 V; I_D = 20 A
Turn−On Delay Time
t_d(ON)
Rise Time
t_r
Turn−Off Delay Time
t_d(OFF)
Fall Time
t_f
DRAIN−SOURCE DIODE CHARACTERISTICS
V_GS = 4.5 V, V_DS = 20 V,
I_D = 20 A, R_G = 2.5 W
Forward Diode Voltage
V_SD
V_GS = 0 V,
T_J = 25°C
I_S = 20 A
T_J = 125°C
Reverse Recovery Time
t_RR
Charge Time
Discharge Time
t_a
V_GS = 0 V, dIS/dt = 100 A/ms,
t_b
I_S = 20 A
Reverse Recovery Charge
Q_RR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Typ Max Unit
V
34.7
mV/°C
1.0
mA
100
±100
nA
3.0
V
5.7
mV/°C
7.1
9.3
mW
11.3 13.6
29
S
1231
198
pF
141
24
12
1.0
nC
4.2
6.3
3.4
V
0.7
W
10
56.4
ns
17.4
6.6
0.84 1.2
V
0.72
18
10
ns
8.0
108
nC
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