NTMFD4902NFT3G Datasheet, PDF(2/10 Page) ON Semiconductor – Dual N-Channel Power MOSFET with Integrated Schottky

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NTMFD4902NFT3G Datasheet, PDF (2/10 Pages) ON Semiconductor – Dual N-Channel Power MOSFET with Integrated Schottky

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NTMFD4902NF

MAXIMUM RATINGS (TJ = 25Â°C unless otherwise stated)

Parameter

Symbol

Value

Unit

DrainâtoâSource Voltage

VDSS

GateâtoâSource Voltage

VGS

Â±20

Continuous Drain Current RqJA (Note 1)

Power Dissipation

RqJA (Note 1)

TA = 25Â°C

TA = 85Â°C

TA = 25Â°C

TA = 85Â°C

TA = 25Â°C

13.5

9.7

17.5

12.6

1.90

1.99

Continuous Drain Current RqJA â¤ 10 s (Note 1)

Power Dissipation

RqJA â¤ 10 s (Note 1)

TA = 25Â°C

TA = 85Â°C

Steady

State

TA = 25Â°C

TA = 85Â°C

TA = 25Â°C

18.2

13.1

16.6

3.45

Continuous Drain Current

RqJA (Note 2)

Power Dissipation

RqJA (Note 2)

TA = 25Â°C

TA = 85Â°C

TA = 25Â°C

TA = 85Â°C

TA = 25 Â°C

10.3

7.4

13.3

9.6

1.10

1.16

Pulsed Drain Current

TA = 25Â°C

IDM

tp = 10 ms

Operating Junction and Storage Temperature

TJ, TSTG

â55 to +150

Â°C

Source Current (Body Diode)

3.4

4.9

Drain to Source dV/dt

dV/dt

6.0

V/ns

Single Pulse DrainâtoâSource Avalanche Energy (TJ = 25C,

VDD = 50 V, VGS = 10 V, IL = XX Apk, L = 0.1 mH, RG = 25 W)

24 A

27 A

EAS

28.8

36.5

Lead Temperature for Soldering Purposes

(1/8â from case for 10 s)

260

Â°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Surfaceâmounted on FR4 board using 1 sqâin pad, 2 oz Cu.

2. Surfaceâmounted on FR4 board using the minimum recommended pad size of 100 mm2.

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