NTB6411AN Datasheet, PDF (2/7 Pages) ON Semiconductor – N-Channel Power MOSFET 100 V, 72 A, 14 mΩ

NTB6411AN, NTP6411AN
ELECTRICAL CHARACTERISTICS (T_J = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
V_(BR)DSS
V_(BR)DSS/T_J
V_GS = 0 V, I_D = 250 mA
100
113
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
I_DSS
I_GSS
V_GS = 0 V,
V_DS = 100 V
T_J = 25°C
T_J = 125°C
V_DS = 0 V, V_GS = $20 V
1.0
mA
100
$100 nA
Gate Threshold Voltage
V_GS(th)
Negative Threshold Temperature Coefficient
V_GS(th)/T_J
Drain−to−Source On−Resistance
R_DS(on)
Forward Transconductance
g_FS
CHARGES, CAPACITANCES & GATE RESISTANCE
V_GS = V_DS, I_D = 250 mA
V_GS = 10 V, I_D = 72 A
V_DS = 5 V, I_D = 10 A
2.0
4.0
V
8.6
mV/°C
12.7
14
mW
24
S
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_G(TOT)
Threshold Gate Charge
Q_G(TH)
Gate−to−Source Charge
Q_GS
Gate−to−Drain Charge
Q_GD
Plateau Voltage
V_GP
Gate Resistance
R_G
SWITCHING CHARACTERISTICS, V_GS = 10 V (Note 3)
Turn−On Delay Time
t_d(on)
Rise Time
t_r
Turn−Off Delay Time
t_d(off)
Fall Time
t_f
DRAIN−SOURCE DIODE CHARACTERISTICS
V_DS = 25 V, V_GS = 0 V,
f = 1 MHz
V_GS = 10 V, V_DS = 80 V,
I_D = 72 A
V_GS = 10 V, V_DD = 80 V,
I_D = 72 A, R_G = 6.2 W
3700
pF
550
200
100
nC
4.0
16
47
5.2
V
3.1
W
16
ns
144
107
157
Forward Diode Voltage
V_SD
I_S = 72 A
T_J = 25°C
T_J = 125°C
Reverse Recovery Time
t_rr
Charge Time
Discharge Time
t_a
V_GS = 0 V, I_S = 72 A,
t_b
dI_S/dt = 100 A/ms
Reverse Recovery Charge
Q_RR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
0.92
1.3
V
0.86
94
ns
64
30
330
nC
http://onsemi.com
2