NTB45N06G Datasheet, PDF (2/7 Pages) ON Semiconductor – Power MOSFET 45 Amps, 60 Volts N−Channel TO−220 and D2PAK

NTP45N06, NTB45N06
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V_GS = 0 Vdc, I_D = 250 mAdc)
Temperature Coefficient (Positive)
V_(BR)DSS
Zero Gate Voltage Drain Current
(V_DS = 60 Vdc, V_GS = 0 Vdc)
(V_DS = 60 Vdc, V_GS = 0 Vdc, T_J = 150°C)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V_DS = V_GS, I_D = 250 mAdc)
Threshold Temperature Coefficient (Negative)
I_DSS
I_GSS
V_GS(th)
Static Drain−to−Source On−Resistance (Note 3)
(V_GS = 10 Vdc, I_D = 22.5 Adc)
R_DS(on)
Static Drain−to−Source On−Voltage (Note 3)
(V_GS = 10 Vdc, I_D = 45 Adc)
(V_GS = 10 Vdc, I_D = 22.5 Adc, T_J = 150°C)
V_DS(on)
Forward Transconductance (Note 3) (V_DS = 8.0 Vdc, I_D = 12 Adc)
g_FS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
C_iss
C_oss
C_rss
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t_d(on)
Rise Time
Turn−Off Delay Time
(V_DD = 30 Vdc, I_D = 45 Adc,
V_GS = 10 Vdc, R_G = 9.1 W) (Note 3)
t_r
t_d(off)
Fall Time
Gate Charge
t_f
Q_T
(V_DS = 48 Vdc, I_D = 45 Adc,
V_GS = 10 Vdc) (Note 3)
Q₁
Q₂
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 45 Adc, V_GS = 0 Vdc) (Note 3)
V_SD
(I_S = 45 Adc, V_GS = 0 Vdc, T_J = 150°C)
Reverse Recovery Time
t_rr
(I_S = 45 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/ms) (Note 3)
t_a
t_b
Reverse Recovery Stored Charge
Q_RR
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
60
70
−
57
Vdc
−
−
mV/°C
mAdc
−
−
1.0
−
−
10
−
−
±100
nAdc
Vdc
2.0
2.8
4.0
mV/°C
−
7.2
−
mW
−
21
26
Vdc
−
0.93
1.4
−
0.93
−
−
16.6
−
mhos
−
1224
1725
pF
−
345
485
−
76
160
−
10
25
ns
−
101
200
−
33
70
−
106
220
−
33
46
nC
−
6.4
−
−
15
−
−
1.08
1.2
Vdc
−
0.93
−
−
53.1
−
ns
−
36
−
−
16.9
−
−
0.087
−
mC
ORDERING INFORMATION
Device
Package
Shipping^†
NTP45N06
TO−220AB
50 Units / Rail
NTP45N06G
TO−220AB
(Pb−Free)
50 Units / Rail
NTB45N06
NTB45N06G
NTB45N06T4
NTB45N06T4G
D²PAK
D²PAK
(Pb−Free)
D²PAK
D²PAK
(Pb−Free)
50 Units / Rail
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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