NSVJ5908DSG5 Datasheet, PDF (2/5 Pages) ON Semiconductor – N-Channel JFET

NSVJ5908DSG5
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Notes 2,3)
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
Gate-to-Drain Breakdown Voltage ^V(BR)GDS IG = 10 A, VDS = 0 V
15
V
Gate-to-Source Leakage Current ^IGSS
VGS = 10 V, VDS = 0 V
1.0 nA
Cutoff Voltage
VGS(off)
VDS = 5 V, ID = 100 A
0.3
0.7
1.5 V
Zero-Gate Voltage Drain Current
IDSS
VDS = 5 V, VGS = 0 V
10
32 mA
Forward Transfer Admittance
| yfs |
VDS = 5 V, VGS = 0 V, f = 1 kHz
24
35
mS
Input Capacitance
Reverse Transfer Capacitance
Ciss
Crss
VDS = 5 V, VGS = 0 V, f = 1 MHz
10.5
pF
3.5
pF
Noise Figure
NF
VDS = 5 V, Rg = 1 kΩ, ID = 1 mA,
f = 1 kHz
1.0
dB
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : The specifications shown above are for each individual JFET.
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