NSVF4009SG4 Datasheet, PDF (2/14 Pages) ON Semiconductor – RF Transistor for Low Noise Amplifier

NSVF4009SG4
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0 A
1.0 A
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0 A
1.0 A
DC Current Gain
hFE
VCE = 1 V, IC = 5 mA
50
120
Gain-Bandwidth Product
fT
VCE = 3 V, IC = 20 mA
20
25
GHz
Reverse Transfer Capacitance
Forward Transfer Gain
Cre
| S21e |²1
| S21e |²2
VCB = 1 V, f = 1 MHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
0.15
pF
9 13.5
dB
17
dB
Noise Figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.1
1.5 dB
1dB Compression Point
PO(1dB)
VCE = 3 V, IC = 20 mA, f = 2 GHz
13.5
dBm
3rd Order Intercept Point
OIP3
VCE = 3 V, IC = 20 mA, f = 2 GHz
23
dBm
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
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