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NSVBAT54LT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diodes
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BAT54L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 μA)
V(BR)R
30
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
Reverse Leakage
(VR = 25 V)
IR
−
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
−
−
−
−
−
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
−
Typ
−
7.6
0.5
0.22
0.29
0.35
0.41
0.52
−
Max
Unit
Volts
−
pF
10
μAdc
2.0
V
0.24
0.32
0.40
0.50
0.80
ns
5.0
820 Ω
+10 V
2k
100 μH IF
0.1 μF
0.1 μF
tr
tp
T
IF
10%
trr
T
50 Ω OUTPUT
PULSE
GENERATOR
DUT
50 Ω INPUT
SAMPLING
OSCILLOSCOPE VR
90%
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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