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NST857BF3T5G Datasheet, PDF (2/4 Pages) ON Semiconductor – PNP General Purpose Transistor | |||
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NST857BF3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage (IC = â10 mA)
Collector âEmitter Breakdown Voltage (IC = â10 mA, VEB = 0)
Collector âBase Breakdown Voltage (IC = â10 mA)
Emitter âBase Breakdown Voltage (IE = â1.0 mA)
Collector Cutoff Current (VCB = â30 V)
Collector Cutoff Current (VCB = â30 V, TA = 150°C)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = â10 mA, VCE = â5.0 V)
(IC = â2.0 mA, VCE = â5.0 V)
Collector âEmitter Saturation Voltage
(IC = â10 mA, IB = â0.5 mA)
(IC = â100 mA, IB = â5.0 mA)
Base âEmitter Saturation Voltage
(IC = â10 mA, IB = â0.5 mA)
(IC = â100 mA, IB = â5.0 mA)
Base âEmitter On Voltage
(IC = â2.0 mA, VCE = â5.0 V)
(IC = â10 mA, VCE = â5.0 V)
SMALLâSIGNAL CHARACTERISTICS
Current âGain â Bandwidth Product
(IC = â10 mA, VCE = â5.0 Vdc, f = 100 MHz)
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Output Capacitance
(VCB = â10 V, f = 1.0 MHz)
Cobo
Input Capacitance
Cibo
(VEB = â0.5 V, IC = 0 mA, f = 1.0 MHz)
Noise Figure
NF
(IC = â0.2 mA, VCE = â5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Min
â45
â50
â50
â5.0
â
â
â
220
â
â
â
â
â0.6
â
100
â
â
â
Typ
Max
Unit
â
â
V
â
â
V
â
â
V
â
â
V
â
â15
nA
â
â4.0
mA
â
150
â
290
475
V
â
â0.3
â
â0.7
V
â0.7
â
â0.9
â
V
â
â0.75
â
â0.82
â
â
MHz
â
4.5
pF
â
10
pF
â
10
dB
0.18
IC/IB = 10
0.16
0.14
0.12
VCE(sat) = 150°C
0.10
25°C
0.08
0.06
0.04
â55°C
0.02
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
800
150°C (5.0 V)
700
600
150°C (1.0 V)
500
25°C (5.0 V)
400
25°C (1.0 V)
300
â55°C (5.0 V)
200
â55°C (1.0 V)
100
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
http://onsemi.com
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