NST847BPDP6T5G Datasheet, PDF (2/7 Pages) ON Semiconductor – Dual Complementary General Purpose Transistor

NST847BPDP6T5G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = 1.0 mA, I_B = 0)
(I_C = −1.0 mA, I_B = 0)
(NPN)
(PNP)
Collector −Base Breakdown Voltage
(I_C = 10 mA, I_E = 0)
(I_C = −10 mA, I_E = 0)
(NPN)
(PNP)
Collector −Emitter Breakdown Voltage
(I_C = 10 mA)
(I_C = −10 mA)
Emitter−Base Breakdown Voltage
(I_E = 1.0 mA, I_C = 0)
(I_E = −1.0 mA, I_C = 0)
(NPN)
(PNP)
(NPN)
(PNP)
Collector Cutoff Current
(V_CB = 30 V)
(V_CB = 30 V, T_A = 150°C)
(V_CB = −30 V)
(V_CB = −30 V, T_A = 150°C)
(NPN)
(NPN)
(PNP)
(PNP)
ON CHARACTERISTICS (Note 4)
DC Current Gain
(I_C = 2.0 mA, V_CE = 5.0 V)
(NPN)
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)CES
V_(BR)EBO
I_CBO
h_FE
(I_C = −2.0 mA, V_CE = −5.0 V)
Collector −Emitter Saturation Voltage
(I_C = 10 mA, I_B = 0.5 mA)
(I_C = 100 mA, I_B = 5.0 mA)
(PNP)
(NPN)
V_CE(sat)
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter Saturation Voltage
(I_C = 10 mA, I_B = 0.5 mA)
(I_C = 100 mA, I_B = 5.0 mA)
(PNP)
(NPN)
V_BE(sat)
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter On Voltage
(I_C = 2.0 mA, V_CE = 5.0 V)
(I_C = 10 mA, V_CE = 5.0 V)
(PNP)
(NPN)
V_BE(on)
(I_C = −2.0 mA, V_CE = −5.0 V)
(I_C = −10 mA, V_CE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I_C = 10 mA, V_CE = 5.0 V, f = 100 MHz)
(PNP)
f_T
(NPN)
(I_C = −10 mA, V_CE = −5.0 V, f = 100 MHz)
Output Capacitance
(V_CB = 10 V, f = 1.0 MHz)
(PNP)
C_ob
(NPN)
(V_CB = −10 V, f = 1.0 MHz)
Noise Figure
(I_C = 0.2 mA, V_CE = 5.0 V, R_S = 2 kW, f = 1 kHz, BW = 200 Hz)
(PNP)
NF
(NPN)
(I_C = −0.2 mA, V_CE = −5.0 V, R_S = 2 kW, f = 1 kHz, BW = 200 Hz)
4. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%.
(PNP)
Min
45
−45
50
−50
50
−50
6.0
−5.0
−
−
−
−
200
220
−
−
−
−
−
−
−
−
0.58
−
−0.60
−
100
100
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
290
290
−
−
−
−
0.70
0.90
−0.70
−0.90
0.66
−
−
−
−
−
−
−
−
−
Max Unit
V
−
−
V
−
−
V
−
−
V
−
−
15
nA
5.0
mA
−15
nA
−4.0 mA
−
450
475
V
0.25
0.60
−0.30
−0.70
V
−
−
−
−
V
0.70
0.77
−0.75
−0.82
MHz
−
−
pF
4.5
4.5
dB
10
10
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