NST489AMT1-D Datasheet, PDF (2/4 Pages) ON Semiconductor – High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications

NST489AMT1, NSVT489AMT1G
ELECTRICAL CHARACTERISTICS (T_A = 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I_C = 10 mA, I_B = 0)
Collector−Base Breakdown Voltage (I_C = 0.1 mA, I_E = 0)
Emitter −Base Breakdown Voltage (I_E = 0.1 mA, I_C = 0)
Collector Cutoff Current (V_CB = 30 V, I_E = 0)
Collector−Emitter Cutoff Current (V_CES = 30 V)
Emitter Cutoff Current (V_EB = 4.0 V)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I_C = 1.0 mA, V_CE = 5.0 V)
(I_C = 0.5 A, V_CE = 5.0 V)
(I_C = 1.0 A, V_CE = 5.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(I_C = 1.0 A, I_B = 100 mA)
(I_C = 0.5 A, I_B = 50 mA)
(I_C = 0.1 A, I_B = 1.0 mA)
Base −Emitter Saturation Voltage (Note 4) (I_C = 1.0 A, I_B = 0.1 A)
Base −Emitter Turn−on Voltage (Note 4) (I_C = 1.0 A, V_CE = 2.0 V)
Cutoff Frequency (I_C = 100 mA, V_CE = 5.0 V, f = 100 MHz
Output Capacitance (f = 1.0 MHz)
4. Pulsed Condition: Pulse Width  300 msec, Duty Cycle  2%.
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_CES
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
f_T
C_obo
Min
Typ
Max Unit
30
−
−
V
50
−
−
V
5.0
−
−
V
−
−
0.1
mA
−
−
0.1
mA
−
−
0.1
mA
300
−
−
300
500
900
200
−
−
−
0.10 0.200
V
−
0.06 0.125
−
0.05 0.075
−
−
1.1
V
−
−
1.1
V
200
300
−
MHz
−
−
15
pF
1.0
0.9
0.8
I_C = 2 A
0.7
I_C = 1 A
0.6
0.5
0.4
0.3
0.2
I_C = 500 mA
0.1 _{IC = 100 mA}
0
0.001
0.01
I_b (A)
Figure 1. V_{CE (sat)} versus I_b
0.1 0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
I_c/I_b = 100
I_c/I_b = 10
0.01
0.1
I_c (A)
Figure 2. V_{CE (sat)} versus I_c
12
800
700 _+125C
600
+25C
500
400
300 ^{−55C}
200
100
0
0.001
V_CE = 5 V
0.01
0.1
I_c (A)
Figure 3. h_FE versus I_c
12
1.2
1.0
0.8 ^{−55C}
+25C
0.6
0.4 ^+125C
V_CE = 5 V
0.2
0
0.001
0.01
0.1
I_c (A)
Figure 4. V_BE(on) versus I_c
12
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