NST45010MW6T1G_14 Datasheet, PDF (2/5 Pages) ON Semiconductor – Dual Matched General Purpose Transistor

NST45010MW6T1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (I_C = −10 mA)
Collector −Emitter Breakdown Voltage, (I_C = −10 mA, V_EB = 0)
Collector −Base Breakdown Voltage, (I_C = −10 mA)
Emitter −Base Breakdown Voltage, (I_E = −1.0 mA)
Collector Cutoff Current (V_CB = −30 V)
Collector Cutoff Current (V_CB = −30 V, T_A = 150°C)
ON CHARACTERISTICS
V_(BR)CEO
−45
−
−
V
V_(BR)CES
−50
−
−
V
V_(BR)CBO
−50
−
−
V
V_(BR)EBO
−5.0
−
−
V
I_CBO
−
−
−15
nA
−
−
−5.0
mA
DC Current Gain
(I_C = −10 mA, V_CE = −5.0 V)
(I_C = −2.0 mA, V_CE = −5.0 V)
(I_C = −2.0 mA, V_CE = −5.0 V) (Note 2)
Collector −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter On Voltage
(I_C = −2.0 mA, V_CE = −5.0 V)
(I_C = −10 mA, V_CE = −5.0 V)
(I_C = −2.0 mA, V_CE = −5.0 V) (Note 3)
SMALL− SIGNAL CHARACTERISTICS
h_FE
−
−
150
−
220
290
475
h_FE(1)/h_FE(2)
0.9
1.0
1.1
V_CE(sat)
mV
−
−
−300
−
−
−650
V_BE(sat)
mV
−
−700
−
−
−900
−
V_BE(on)
mV
−600
−
−750
−
−
−820
V_{BE(1) −} V_BE(2)
−
−1.0 −2.0
Current −Gain − Bandwidth Product, (I_C = −10 mA, V_CE = −5 Vdc, f = 100 MHz)
f_T
100
−
−
MHz
Output Capacitance, (V_CB = −10 V, f = 1.0 MHz)
C_ob
−
−
4.5
pF
Noise Figure, (I_C = −0.2 mA, V_CE = −5 Vdc, R_S = 2 kW, f = 1 kHz, BW = 200Hz)
NF
−
−
10
dB
2. h_FE(1)/h_FE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller h_FE is used as numerator.
3. V_BE(1) − V_BE(2) is the absolute difference of one transistor compared to the other transistor within the same package.
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