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NSS40500UW3T2G_12 Datasheet, PDF (2/5 Pages) ON Semiconductor – 40 V, 5.0 A, Low VCE(sat) PNP Transistor
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NSS40501UW3, NSV40501UW3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
40
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ICBO
−
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
−
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
(IC = 3.0 A, VCE = 2.0 V)
hFE
200
200
200
200
180
Collector −Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.020 A)
(IC = 3.0 A, IB = 0.030 A)
(IC = 4.0 A, IB = 0.400 A)
VCE(sat)
−
−
−
−
−
−
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.01 A)
VBE(sat)
−
Base −Emitter Turn−on Voltage (Note 3)
(IC = 2.0 A, VCE = 2.0 V)
VBE(on)
−
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
150
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
−
Cobo
−
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
td
−
tr
−
ts
−
tf
−
Typical
Max
−
−
−
−
−
−
−
0.1
−
0.1
−
−
320
305
295
0.006
0.038
0.060
0.097
0.130
0.110
0.760
0.730
−
−
−
−
−
−
−
−
−
−
0.010
0.045
0.080
0.120
0.160
0.150
0.900
0.900
−
650
70
90
100
1050
100
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
V
V
V
MHz
pF
pF
ns
ns
ns
ns
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