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NSS30071MR6T1G Datasheet, PDF (2/6 Pages) ON Semiconductor – 30 V, 0.7 A, Low VCE(sat) NPN Transistor
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NSS30071MR6T1G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Collector −Base Breakdown Voltage
(IC = 100 mAdc)
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
Emitter−Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS
(VEB = 5.0 Vdc, IC = 0 Adc)
hFE
VCE(sat)
VCE(sat)
VBE(sat)
VBE(on)
DC Current Gain
Collector −Emitter Saturation Voltage
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
(VCE = 3.0 Vdc, IC = 100 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 700 mAdc, IB = 70 mAdc)
(IC = 700 mAdc, IB = 70 mAdc)
(IC = 700 mAdc, VCE = 1.0 Vdc)
Min
Typ
Max Unit
40
−
30
−
−
Vdc
−
Vdc
5.0
−
−
Vdc
−
−
1.0
mAdc
−
−
10
−
−
10
mAdc
150
−
−
Vdc
−
−
0.25
Vdc
−
−
0.4
Vdc
−
−
1.1
Vdc
−
−
1.0
Vdc
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