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NSS20201MR6T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – 20 V, 3 A, Low VCE(sat) NPN Transistor
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NSS20201MR6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector−Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
Collector Cutoff Current
(VCB = 40 V, IE = 0)
Collector−Emitter Cutoff Current
(VCES = 20 V)
Emitter Cutoff Current
(VEB = 5.0 V)
ON CHARACTERISTICS
V(BR)CEO
V
20
−
−
V(BR)CBO
V
40
−
−
V(BR)EBO
V
5.0
−
−
ICBO
mA
−
−
0.1
ICES
mA
−
−
0.1
IEBO
−
mA
0.1
DC Current Gain (Note 3)
(IC = 1.0 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 10 mA)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.1 A)
hFE
300
−
−
300
−
−
200
−
−
VCE(sat)
−
−
−
V
−
0.150
−
0.100
−
0.025
VBE(sat)
V
−
−
0.95
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz
Output Capacitance (f = 1.0 MHz)
VBE(on)
V
−
−
0.90
fT
200
−
MHz
−
Cobo
pF
−
−
15
3. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.
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