English
Language : 

NSS20200LT1G_07 Datasheet, PDF (2/5 Pages) ON Semiconductor – 20 V, 4.0 A, Low VCE(sat) PNP Transistor
◁
NSS20200LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −7.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
Rise (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
Storage (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
Fall (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
td
tr
ts
tf
Min
−20
−20
−7.0
−
−
250
250
180
150
−
−
−
−
−
−
100
−
−
−
−
−
−
Typ
Max
Unit
Vdc
−
−
Vdc
−
−
Vdc
−
−
mAdc
−
−0.1
mAdc
−
−0.1
−
−
300
−
−
−
−
−
−0.008
−0.065
−0.100
−0.130
−0.013
−0.090
−0.120
−0.180
−
−0.900
−
−0.900
−
−
−
330
−
100
V
V
V
MHz
pF
pF
−
60
ns
−
120
ns
−
300
ns
−
130
ns
http://onsemi.com
2
 ▷