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NSS12200LT1G_09 Datasheet, PDF (2/5 Pages) ON Semiconductor – 12 V, 4.0 A, Low VCE(sat) PNP Transistor
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NSS12200LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −12 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −7.0 Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
td
Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
tr
Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
ts
Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
tf
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
Min
−12
−12
−7.0
−
−
250
250
200
150
−
−
−
−
−
−
100
−
−
−
−
−
−
Typ
Max
Unit
Vdc
−
−
Vdc
−
−
Vdc
−
−
mAdc
−
−0.1
mAdc
−
−0.1
−
300
−
−
−0.008
−0.065
−0.100
−0.130
−
−
−
−
−
−
−
−
−
−0.011
−0.090
−0.120
−0.180
−0.900
−0.900
−
350
120
V
V
V
MHz
pF
pF
−
60
ns
−
120
ns
−
250
ns
−
130
ns
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