 English |
|
|
|
|
|
|
|
| NSR20F30QNXT5G Datasheet, PDF (2/6 Pages) ON Semiconductor – Schottky Diode Optimized | |||
| |||
| ◁ |
NSR20F30QNXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
JunctionâtoâAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
213
PD
586
Thermal Resistance
JunctionâtoâAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
80
1.56
Storage Temperature Range
Tstg
â40 to +125
Junction Temperature
TJ
+150
1. Mounted onto a 4 in square FRâ4 board 50 mm sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FRâ4 board 1 in sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Leakage
IR
(VR = 10 V)
(VR = 30 V)
Forward Voltage
VF
(IF = 1.0 A)
(IF = 2.0 A)
Reverse Recovery (Special)
TRR
Switch from Forward Current to Reverse Voltage
Time taken from 1 ns Transition Time to Fully Stabilized
(IF = 1.5 A to VR = 28 V, 25°C)
(IF = 1.5 A to VR = 28 V, 85°C)
Typ
21.89
21.35
Max
Unit
mA
20
150
V
0.42
0.48
ns
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese