NSR20F30NXT5G Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode

NSR20F30NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
R_qJA
213
P_D
586
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
R_qJA
P_D
80
1.56
Storage Temperature Range
T_stg
−40 to +125
Junction Temperature
T_J
+150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(V_R = 10 V)
(V_R = 30 V)
I_R
mA
20
150
Forward Voltage
(I_F = 1.0 A)
(I_F = 2.0 A)
V_F
V
0.42
0.48
10
T_J = 125°C
1
T_J = 150°C
0.1
0.01
0.001
0.0
75°C 25°C −25°C
0.1
0.2
0.3
0.4
V_F, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
100000
10000
1000
100
10
1
0.1
0.01
0.5
0.0010
150°C
125°C
75°C
25°C
−25°C
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current
450
400
350
300
250
200
150
100
50
0
0
T_A = 25°C
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
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