NSR20F20NXT5G Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode

NSR20F20NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
R_qJA
213
P_D
586
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
R_qJA
P_D
80
1.56
Storage Temperature Range
T_stg
−40 to +125
Junction Temperature
T_J
+150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Leakage
I_R
(V_R = 10 V)
(V_R = 20 V)
Forward Voltage
V_F
(I_F = 1.0 A)
(I_F = 2.0 A)
Typ
0.390
0.450
Max
Unit
mA
30
150
V
0.420
0.470
10
T_J = 125°C
1
100,000
10,000
1,000
150°C
125°C
0.1 ^{TJ = 150°C}
100
75°C
10
1
75°C
0.01
0.1
25°C
−25°C
0.01
25°C
−25°C
0.001
0.001
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
0
4
8
12
16
20
V_F, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
V_R, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current
500
T_A = 25°C
400
300
200
100
0
0
4
8
12
16
20
V_R, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
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