NSR15SDW1T1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual RF Schottky Diode

NSR15SDW1T1 NSR15SDW1T2
ELECTRICAL CHARACTERISTICS
Characteristic
Breakdown Voltage (I_R = 10 mA)
Reverse Leakage (V_R = 1 V)
Forward Voltage (I_F = 1 mA)
Forward Voltage (I_F = 10 mA)
Delta V_F (I_F = 1 mA, All Diodes)
Capacitance (V_F = 0 V, f = 1 MHz)
Symbol
V_BR
I_R
V_F1
V_F2
DV_F
C_T
Min
Typ
Max Unit
15
20
−
V
−
2
50
nA
−
390
415
mV
−
530
680
mV
−
1
15
mV
−
0.8
1
pF
100
100 k
10 k
10
75°C
1
25°C
1k
100
125°C
−25°C
0.1
10
125°C
75°C
25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
V_F, FORWARD VOLTAGE (V)
Figure 1. Forward Current versus Forward
Voltage at Temperatures
1
0
5
10
15
V_R, REVERSE VOLTAGE (V)
Figure 2. Reverse Current versus Reverse
Voltage
1
0.9
0.8
0.7
0.6
0.5
01
2
3
45
6
7
8
V_R, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance versus Reverse
Voltage
1000
100
10
1
0.1
1
10
100
I_F, FORWARD CURRENT (mA)
Figure 4. Dynamic Resistance versus Forward
Current
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